LEADER 03777nam  2201057z- 450 
001 9910595076903321
005 20231214133253.0
035   $a(CKB)5680000000080757
035   $a(oapen)https://directory.doabooks.org/handle/20.500.12854/92043
035   $a(EXLCZ)995680000000080757
100   $a20202209d2022      |y             0
101 0 $aeng
135   $aurmn|---annan
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aSilicon Nanodevices
210   $aBasel$cMDPI Books$d2022
215   $a1 electronic resource (238 p.)
311   $a3-0365-4677-4 
311   $a3-0365-4678-2 
330   $aThis book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.
606   $aTechnology: general issues$2bicssc
610   $asilicon
610   $ayolk?shell structure
610   $aanode
610   $alithium-ion batteries
610   $ain-plane nanowire
610   $asite-controlled
610   $aepitaxial growth
610   $agermanium
610   $ananowire-based quantum devices
610   $aHfO2/Si0.7Ge0.3 gate stack
610   $aozone oxidation
610   $aSi-cap
610   $ainterface state density
610   $apassivation
610   $aGOI
610   $aphotodetectors
610   $adark current
610   $aresponsivity
610   $aprussian blue nanoparticles
610   $aorganotrialkoxysilane
610   $asilica beads
610   $aarsenite
610   $aarsenate
610   $awater decontamination
610   $avertical gate-all-around (vGAA)
610   $adigital etch
610   $aquasi-atomic-layer etching (q-ALE)
610   $aselective wet etching
610   $aHNO3 concentration
610   $adoping effect
610   $avertical Gate-all-around (vGAA)
610   $ap+-Ge0.8Si0.2/Ge stack
610   $adual-selective wet etching
610   $aatomic layer etching (ALE)
610   $astacked SiGe/Si
610   $aepitaxial grown
610   $aFin etching
610   $aFinFET
610   $ashort-term potentiation (STP)
610   $along-term potentiation (LTP)
610   $acharge-trap synaptic transistor
610   $aband-to-band tunneling
610   $apattern recognition
610   $aneural network
610   $aneuromorphic system
610   $aSi-MOS
610   $aquantum dot
610   $aspin qubits
610   $aquantum computing
610   $aGeSn
610   $aCVD
610   $alasers
610   $adetectors
610   $atransistors
610   $aIII-V on Si
610   $aheteroepitaxy
610   $athreading dislocation densities (TDDs)
610   $aanti-phase boundaries (APBs)
610   $aselective epitaxial growth (SEG)
615  7$aTechnology: general issues
700   $aRadamson$b Henry$4edt$01236601
702   $aWang$b Guilei$4edt
702   $aRadamson$b Henry$4oth
702   $aWang$b Guilei$4oth
906   $aBOOK
912   $a9910595076903321
996   $aSilicon Nanodevices$93033980
997   $aUNINA