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CMOS Plasma and Process Damage / / by Kirk Prall



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Autore: Prall Kirk Visualizza persona
Titolo: CMOS Plasma and Process Damage / / by Kirk Prall Visualizza cluster
Pubblicazione: Cham : , : Springer Nature Switzerland : , : Imprint : Springer, , 2025
Edizione: 1st ed. 2025.
Descrizione fisica: 1 online resource (XIX, 466 p. 399 illus., 368 illus. in color.)
Disciplina: 621.3815
Soggetto topico: Electronic circuit design
Embedded computer systems
Solid state physics
Electronics Design and Verification
Embedded Systems
Electronic Devices
Nota di contenuto: Chapter 1. BACKGROUND -- Chapter 2. THE ANTENNA EFFECT -- Chapter 3. DIODE AND TRANSISTOR PROTECTION -- Chapter 4. SIGNATURES OF PROCESS DAMAGE -- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE -- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION -- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS -- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE -- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE -- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS -- Chapter 11. PROCESS DAMAGE TEST STRUCTURES -- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE -- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES -- Chapter 14. THE ROLE OF HYDROGEN -- Chapter 15. METALLIC DEFECTS -- Chapter 16. MOBILE ION CONTAMINATION -- Chapter 17. FIXED CHARGE.
Sommario/riassunto: This book discusses the complex technology of building CMOS computer chips and covers some of the unusual problems that can occur during chip manufacturing. Readers will learn how plasma and process damage results from the high-energy processes that are used in chip manufacturing, causing harm to the chips, functional failure and reliability problems. Provides an up-to-date, single-source reference on CMOS plasma and process damage, for engineers from all disciplines Offers concise, comprehensive coverage, discussing real problems with necessary background for working engineers Applies to design, layout, mask making, lithography, process and device engineering, testing and reliability.
Titolo autorizzato: CMOS Plasma and Process Damage  Visualizza cluster
ISBN: 3-031-89029-9
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9911003689103321
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