LEADER 03146nam 22005535 450 001 9911003689103321 005 20250516130258.0 010 $a3-031-89029-9 024 7 $a10.1007/978-3-031-89029-1 035 $a(CKB)38858963000041 035 $a(DE-He213)978-3-031-89029-1 035 $a(MiAaPQ)EBC32123562 035 $a(Au-PeEL)EBL32123562 035 $a(OCoLC)1520430399 035 $a(EXLCZ)9938858963000041 100 $a20250516d2025 u| 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aCMOS Plasma and Process Damage /$fby Kirk Prall 205 $a1st ed. 2025. 210 1$aCham :$cSpringer Nature Switzerland :$cImprint: Springer,$d2025. 215 $a1 online resource (XIX, 466 p. 399 illus., 368 illus. in color.) 311 08$a3-031-89028-0 327 $aChapter 1. BACKGROUND -- Chapter 2. THE ANTENNA EFFECT -- Chapter 3. DIODE AND TRANSISTOR PROTECTION -- Chapter 4. SIGNATURES OF PROCESS DAMAGE -- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE -- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION -- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS -- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE -- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE -- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS -- Chapter 11. PROCESS DAMAGE TEST STRUCTURES -- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE -- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES -- Chapter 14. THE ROLE OF HYDROGEN -- Chapter 15. METALLIC DEFECTS -- Chapter 16. MOBILE ION CONTAMINATION -- Chapter 17. FIXED CHARGE. 330 $aThis book discusses the complex technology of building CMOS computer chips and covers some of the unusual problems that can occur during chip manufacturing. Readers will learn how plasma and process damage results from the high-energy processes that are used in chip manufacturing, causing harm to the chips, functional failure and reliability problems. Provides an up-to-date, single-source reference on CMOS plasma and process damage, for engineers from all disciplines Offers concise, comprehensive coverage, discussing real problems with necessary background for working engineers Applies to design, layout, mask making, lithography, process and device engineering, testing and reliability. 606 $aElectronic circuit design 606 $aEmbedded computer systems 606 $aSolid state physics 606 $aElectronics Design and Verification 606 $aEmbedded Systems 606 $aElectronic Devices 615 0$aElectronic circuit design. 615 0$aEmbedded computer systems. 615 0$aSolid state physics. 615 14$aElectronics Design and Verification. 615 24$aEmbedded Systems. 615 24$aElectronic Devices. 676 $a621.3815 700 $aPrall$b Kirk$4aut$4http://id.loc.gov/vocabulary/relators/aut$01821157 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911003689103321 996 $aCMOS Plasma and Process Damage$94384794 997 $aUNINA LEADER 00798nam0 2200289 450 001 9911041529703321 005 20251119133704.0 010 $a9781107468696 100 $a20251119d2015----km y0itay50 ba 101 0 $aeng 102 $aGB 105 $ay 001yy 200 1 $aEmpower B1+$eintermediate workbook with answers$fPeter Anderson 210 $aCambridge$cCambridge University Press$d2015 215 $a87 p.$cill.$d30 cm 225 1 $aCambridge english corpus 454 0$12001 610 0 $aLingua inglese$aGrammatica 676 $a425$v23$zita 700 1$aAnderson,$bPeter$0628330 801 0$aIT$bUNINA$gREICAT$2UNIMARC 901 $aBK 912 $a9911041529703321 952 $a425 AND 1$b13276$fBFS 959 $aBFS 996 $aEmpower B1+$94456209 997 $aUNINA