Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons / / by Herbert D. Hendricks and Donald H. Phillips
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| Autore: |
Hendricks Herbert D.
|
| Titolo: |
Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons / / by Herbert D. Hendricks and Donald H. Phillips
|
| Pubblicazione: | Washington, D.C. : , : National Aeronautics and Space Administration, , November 1968 |
| Descrizione fisica: | 1 online resource (30 pages) : illustrations |
| Soggetto topico: | Semiconductors (materials) |
| Semiconductor nuclear counters | |
| Persona (resp. second.): | PhillipsDonald H. |
| Note generali: | "November 1968." |
| Nota di bibliografia: | Includes bibliographical references (pages 9-10). |
| Titolo autorizzato: | Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910715930503321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |