01690oam 2200481 450 991071593050332120210521144333.0(CKB)5470000002516792(OCoLC)761377513(OCoLC)995470000002516792(EXLCZ)99547000000251679220111115j196811 ua 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierResolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons /by Herbert D. Hendricks and Donald H. PhillipsWashington, D.C. :National Aeronautics and Space Administration,November 1968.1 online resource (30 pages) illustrationsNASA/TN ;D-4901"November 1968."Includes bibliographical references (pages 9-10).Semiconductors (materials)nasatSemiconductor nuclear countersfastSemiconductors (materials)Semiconductor nuclear counters.Hendricks Herbert D.1397390Phillips Donald H.United States.National Aeronautics and Space Administration,OCLCEOCLCEOCLCQOCLCFOCLCOOCLCQGPOOCLCOGPOBOOK9910715930503321Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons3458931UNINA