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100   $a20111115j196811    ua             0
101 0 $aeng
135   $aur|||||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aResolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons /$fby Herbert D. Hendricks and Donald H. Phillips
210  1$aWashington, D.C. :$cNational Aeronautics and Space Administration,$dNovember 1968.
215   $a1 online resource (30 pages) $cillustrations
225 1 $aNASA/TN ;$vD-4901
300   $a"November 1968."
320   $aIncludes bibliographical references (pages 9-10).
606   $aSemiconductors (materials)$2nasat
606   $aSemiconductor nuclear counters$2fast
615  7$aSemiconductors (materials)
615  7$aSemiconductor nuclear counters.
700   $aHendricks$b Herbert D.$01397390
702   $aPhillips$b Donald H.
712 02$aUnited States.$bNational Aeronautics and Space Administration,
801  0$bOCLCE
801  1$bOCLCE
801  2$bOCLCQ
801  2$bOCLCF
801  2$bOCLCO
801  2$bOCLCQ
801  2$bGPO
801  2$bOCLCO
801  2$bGPO
906   $aBOOK
912   $a9910715930503321
996   $aResolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons$93458931
997   $aUNINA