LEADER 00689nam0-22002651i-450- 001 990003345400403321 005 20080516110616.0 035 $a000334540 035 $aFED01000334540 035 $a(Aleph)000334540FED01 035 $a000334540 100 $a20030910d--------km-y0itay50------ba 101 0 $aeng 105 $ay-------001yy 200 1 $a<>travelling woman$fa novel$fJohn wain 210 $aLondon$cMacMillan$d1959 676 $a045 700 1$aWain,$bJohn$0163532 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990003345400403321 952 $a045 WAI$bLINGUE 1246$fDECLI 959 $aDECLI 996 $aTravelling woman$9442662 997 $aUNINA LEADER 01690oam 2200481 450 001 9910715930503321 005 20210521144333.0 035 $a(CKB)5470000002516792 035 $a(OCoLC)761377513 035 $a(OCoLC)995470000002516792 035 $a(EXLCZ)995470000002516792 100 $a20111115j196811 ua 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aResolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons /$fby Herbert D. Hendricks and Donald H. Phillips 210 1$aWashington, D.C. :$cNational Aeronautics and Space Administration,$dNovember 1968. 215 $a1 online resource (30 pages) $cillustrations 225 1 $aNASA/TN ;$vD-4901 300 $a"November 1968." 320 $aIncludes bibliographical references (pages 9-10). 606 $aSemiconductors (materials)$2nasat 606 $aSemiconductor nuclear counters$2fast 615 7$aSemiconductors (materials) 615 7$aSemiconductor nuclear counters. 700 $aHendricks$b Herbert D.$01397390 702 $aPhillips$b Donald H. 712 02$aUnited States.$bNational Aeronautics and Space Administration, 801 0$bOCLCE 801 1$bOCLCE 801 2$bOCLCQ 801 2$bOCLCF 801 2$bOCLCO 801 2$bOCLCQ 801 2$bGPO 801 2$bOCLCO 801 2$bGPO 906 $aBOOK 912 $a9910715930503321 996 $aResolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons$93458931 997 $aUNINA