Measurement techniques for high power semiconductor materials and devices : annual report, January 1 to December 31, 1976 / / D. L. Blackburn; R. Y. Koyama; F. F. Oattinger; G. J. Rogers
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| Autore: |
Blackburn D. L
|
| Titolo: |
Measurement techniques for high power semiconductor materials and devices : annual report, January 1 to December 31, 1976 / / D. L. Blackburn; R. Y. Koyama; F. F. Oattinger; G. J. Rogers
|
| Pubblicazione: | Gaithersburg, MD : , : U.S. Dept. of Commerce, National Institute of Standards and Technology, , 1977 |
| Descrizione fisica: | 1 online resource |
| Altri autori: |
BlackburnD. L
KoyamaR. Y
OattingerF. F
RogersG. J
|
| Note generali: | 1977. |
| Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes. | |
| Title from PDF title page. | |
| Nota di bibliografia: | Includes bibliographical references. |
| Altri titoli varianti: | Measurement techniques for high power semiconductor materials and devices |
| Titolo autorizzato: | Measurement techniques for high power semiconductor materials and devices |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910710006703321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |