LEADER 01611aam  2200421I  450 
001 9910710006703321
005 20151118015330.0
024 8 $aGOVPUB-C13-d5036bc0811babf4a3c669d3e5e111c3
035   $a(CKB)5470000002476214
035   $a(OCoLC)929883349
035   $a(EXLCZ)995470000002476214
100   $a20151118d1977      ua             0
101 0 $aeng
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aMeasurement techniques for high power semiconductor materials and devices $eannual report, January 1 to December 31, 1976 /$fD. L. Blackburn; R. Y. Koyama; F. F. Oattinger; G. J. Rogers
210  1$aGaithersburg, MD :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d1977.
215   $a1 online resource
225 1 $aNBSIR ;$v77-1249
300   $a1977.
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from PDF title page.
320   $aIncludes bibliographical references.
517   $aMeasurement techniques for high power semiconductor materials and devices 
700   $aBlackburn$b D. L$01407178
701   $aBlackburn$b D. L$01407178
701   $aKoyama$b R. Y$01419564
701   $aOattinger$b F. F$01419565
701   $aRogers$b G. J$01402307
712 02$aUnited States.$bNational Bureau of Standards.
801  0$bNBS
801  1$bNBS
801  2$bGPO
906   $aBOOK
912   $a9910710006703321
996   $aMeasurement techniques for high power semiconductor materials and devices$93534448
997   $aUNINA