01611aam 2200421I 450 991071000670332120151118015330.0GOVPUB-C13-d5036bc0811babf4a3c669d3e5e111c3(CKB)5470000002476214(OCoLC)929883349(EXLCZ)99547000000247621420151118d1977 ua 0engrdacontentrdamediardacarrierMeasurement techniques for high power semiconductor materials and devices annual report, January 1 to December 31, 1976 /D. L. Blackburn; R. Y. Koyama; F. F. Oattinger; G. J. RogersGaithersburg, MD :U.S. Dept. of Commerce, National Institute of Standards and Technology,1977.1 online resourceNBSIR ;77-12491977.Contributed record: Metadata reviewed, not verified. Some fields updated by batch processes.Title from PDF title page.Includes bibliographical references.Measurement techniques for high power semiconductor materials and devices Blackburn D. L1407178Blackburn D. L1407178Koyama R. Y1419564Oattinger F. F1419565Rogers G. J1402307United States.National Bureau of Standards.NBSNBSGPOBOOK9910710006703321Measurement techniques for high power semiconductor materials and devices3534448UNINA