Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications / / Fred Semendy [and three others]
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| Autore: |
Semendy Fred
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| Titolo: |
Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications / / Fred Semendy [and three others]
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| Pubblicazione: | Adelphi, MD : , : Army Research Laboratory, , 2012 |
| Descrizione fisica: | 1 online resource (vi, 16 pages) : color illustrations |
| Soggetto topico: | Surfaces (Technology) - Analysis |
| Chemical vapor deposition | |
| Optoelectronic devices | |
| Note generali: | Title from title screen (viewed on Jan. 17, 2013). |
| "September 2012." | |
| Nota di bibliografia: | Includes bibliographical references (pages 11-12). |
| Altri titoli varianti: | Surface characteristics of etched and non-etched silicon germanium |
| Titolo autorizzato: | Surface characteristics of etched and non-etched silicon germanium (SiGe) |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910702307603321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |