01652nam 2200421I 450 991070230760332120130117132453.0(CKB)5470000002427087(OCoLC)824557063(EXLCZ)99547000000242708720130117d2012 ua 0engurbn|||||||||rdacontentrdamediardacarrierSurface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications /Fred Semendy [and three others]Adelphi, MD :Army Research Laboratory,2012.1 online resource (vi, 16 pages) color illustrationsARL-TR ;6128Title from title screen (viewed on Jan. 17, 2013)."September 2012."Includes bibliographical references (pages 11-12).Surface characteristics of etched and non-etched silicon germanium Surfaces (Technology)AnalysisChemical vapor depositionOptoelectronic devicesSurfaces (Technology)Analysis.Chemical vapor deposition.Optoelectronic devices.Semendy Fred1386303U.S. Army Research Laboratory,GPOGPOBOOK9910702307603321Surface characteristics of etched and non-etched silicon germanium (SiGe)3435166UNINA