MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider
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| Autore: |
Galup-Montoro Carlos
|
| Titolo: |
MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider
|
| Pubblicazione: | Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
| Descrizione fisica: | 1 online resource (445 p.) |
| Disciplina: | 621.3815284 |
| Soggetto topico: | Metal oxide semiconductor field-effect transistors - Mathematical models |
| Field-effect transistors - Mathematical models | |
| Soggetto genere / forma: | Electronic books. |
| Altri autori: |
SchneiderMárcio Cherem
|
| Note generali: | Description based upon print version of record. |
| Nota di bibliografia: | Includes bibliographical references and index. |
| Nota di contenuto: | Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension |
| Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index | |
| Sommario/riassunto: | This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex |
| Titolo autorizzato: | MOSFET modeling for circuit analysis and design |
| ISBN: | 1-281-12087-1 |
| 9786611120870 | |
| 981-270-759-X | |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910450680703321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |
Serie:
International series on advances in solid state electronics and technology.