03612nam 2200649Ia 450 991045068070332120200520144314.01-281-12087-19786611120870981-270-759-X(CKB)1000000000334210(EBL)312288(OCoLC)476099450(SSID)ssj0000205771(PQKBManifestationID)11187279(PQKBTitleCode)TC0000205771(PQKBWorkID)10212540(PQKB)10141285(MiAaPQ)EBC312288(WSP)00006111(Au-PeEL)EBL312288(CaPaEBR)ebr10188796(CaONFJC)MIL112087(OCoLC)935264138(EXLCZ)99100000000033421020070607d2007 uy 0engur|n|---|||||txtccrMOSFET modeling for circuit analysis and design[electronic resource] /Carlos Galup-Montoro, Márcio Cherem SchneiderSingapore ;Hackensack, NJ World Scientificc20071 online resource (445 p.)International series on advances in solid state electronics and technologyDescription based upon print version of record.981-256-810-7 Includes bibliographical references and index.Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One DimensionAppendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; IndexThis is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact exInternational series on advances in solid state electronics and technology.Metal oxide semiconductor field-effect transistorsMathematical modelsField-effect transistorsMathematical modelsElectronic books.Metal oxide semiconductor field-effect transistorsMathematical models.Field-effect transistorsMathematical models.621.3815284Galup-Montoro Carlos937147Schneider Márcio Cherem937148MiAaPQMiAaPQMiAaPQBOOK9910450680703321MOSFET modeling for circuit analysis and design2110742UNINA