LEADER 03612nam 2200649Ia 450 001 9910450680703321 005 20200520144314.0 010 $a1-281-12087-1 010 $a9786611120870 010 $a981-270-759-X 035 $a(CKB)1000000000334210 035 $a(EBL)312288 035 $a(OCoLC)476099450 035 $a(SSID)ssj0000205771 035 $a(PQKBManifestationID)11187279 035 $a(PQKBTitleCode)TC0000205771 035 $a(PQKBWorkID)10212540 035 $a(PQKB)10141285 035 $a(MiAaPQ)EBC312288 035 $a(WSP)00006111 035 $a(Au-PeEL)EBL312288 035 $a(CaPaEBR)ebr10188796 035 $a(CaONFJC)MIL112087 035 $a(OCoLC)935264138 035 $a(EXLCZ)991000000000334210 100 $a20070607d2007 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aMOSFET modeling for circuit analysis and design$b[electronic resource] /$fCarlos Galup-Montoro, Ma?rcio Cherem Schneider 210 $aSingapore ;$aHackensack, NJ $cWorld Scientific$dc2007 215 $a1 online resource (445 p.) 225 1 $aInternational series on advances in solid state electronics and technology 300 $aDescription based upon print version of record. 311 $a981-256-810-7 320 $aIncludes bibliographical references and index. 327 $aForeword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension 327 $aAppendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index 330 $aThis is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex 410 0$aInternational series on advances in solid state electronics and technology. 606 $aMetal oxide semiconductor field-effect transistors$xMathematical models 606 $aField-effect transistors$xMathematical models 608 $aElectronic books. 615 0$aMetal oxide semiconductor field-effect transistors$xMathematical models. 615 0$aField-effect transistors$xMathematical models. 676 $a621.3815284 700 $aGalup-Montoro$b Carlos$0937147 701 $aSchneider$b Ma?rcio Cherem$0937148 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910450680703321 996 $aMOSFET modeling for circuit analysis and design$92110742 997 $aUNINA