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Metal Impurities in Silicon- and Germanium-Based Technologies : Origin, Characterization, Control, and Device Impact / / by Cor Claeys, Eddy Simoen



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Autore: Claeys Cor L Visualizza persona
Titolo: Metal Impurities in Silicon- and Germanium-Based Technologies : Origin, Characterization, Control, and Device Impact / / by Cor Claeys, Eddy Simoen Visualizza cluster
Pubblicazione: Cham : , : Springer International Publishing : , : Imprint : Springer, , 2018
Edizione: 1st ed. 2018.
Descrizione fisica: 1 online resource (XXXIII, 438 p. 215 illus., 207 illus. in color.)
Disciplina: 620.11295
620.11297
Soggetto topico: Optical materials
Electronics - Materials
Microwaves
Optical engineering
Semiconductors
Electronic circuits
Materials science
Optical and Electronic Materials
Microwaves, RF and Optical Engineering
Electronic Circuits and Devices
Characterization and Evaluation of Materials
Persona (resp. second.): SimoenE (Eddy)
Nota di contenuto: Preface -- Introduction -- Basic Properties of Metals in Semiconductors -- Sources of Metals in Si and Ge Processing -- Characterization and Detection of Metals in Silicon and Germanium -- Electrical Activity of Metals in Si and Ge -- Impact of Metals on Silicon Devices and Circuits -- Gettering and Passivation of Metals in Silicon and Germanium -- Modeling and Simulation of Metals in Silicon and Germanium -- Conclusions.
Sommario/riassunto: This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.
Titolo autorizzato: Metal Impurities in Silicon- and Germanium-Based Technologies  Visualizza cluster
ISBN: 3-319-93925-4
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910298598003321
Lo trovi qui: Univ. Federico II
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Serie: Springer Series in Materials Science, . 0933-033X ; ; 270