1.

Record Nr.

UNINA9910298598003321

Autore

Claeys Cor L

Titolo

Metal Impurities in Silicon- and Germanium-Based Technologies : Origin, Characterization, Control, and Device Impact / / by Cor Claeys, Eddy Simoen

Pubbl/distr/stampa

Cham : , : Springer International Publishing : , : Imprint : Springer, , 2018

ISBN

3-319-93925-4

Edizione

[1st ed. 2018.]

Descrizione fisica

1 online resource (XXXIII, 438 p. 215 illus., 207 illus. in color.)

Collana

Springer Series in Materials Science, , 0933-033X ; ; 270

Disciplina

620.11295

620.11297

Soggetti

Optical materials

Electronics - Materials

Microwaves

Optical engineering

Semiconductors

Electronic circuits

Materials science

Optical and Electronic Materials

Microwaves, RF and Optical Engineering

Electronic Circuits and Devices

Characterization and Evaluation of Materials

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Nota di contenuto

Preface -- Introduction -- Basic Properties of Metals in Semiconductors -- Sources of Metals in Si and Ge Processing -- Characterization and Detection of Metals in Silicon and Germanium -- Electrical Activity of Metals in Si and Ge -- Impact of Metals on Silicon Devices and Circuits -- Gettering and Passivation of Metals in Silicon and Germanium -- Modeling and Simulation of Metals in Silicon and Germanium -- Conclusions.

Sommario/riassunto

This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important



metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.