Electrical impact of SiC structural crystal defects on high electric field devices / / Philip G. Neudeck

• Autore: Neudeck Philip G.
• Pubblicazione: Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , December 1999
• Descrizione fisica: 1 online resource (6 pages) : illustrations
• Soggetto topico: Crystal defects; Silicon; Electric fields; Electrical properties; Switching
• Note generali: "December 1999."; "Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."; "Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
• Nota di bibliografia: Includes bibliographical references (page 6).
• Altri titoli varianti: Electrical impact of silicon carbide structural crystal defects on high electric field devices
• Titolo autorizzato: Electrical impact of SiC structural crystal defects on high electric field devices
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910706124003321
• Lo trovi qui: Univ. Federico II