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035   $a(CKB)5470000002455190
035   $a(OCoLC)1003531351
035   $a(EXLCZ)995470000002455190
100   $a20170913j199912    ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aElectrical impact of SiC structural crystal defects on high electric field devices /$fPhilip G. Neudeck
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$dDecember 1999.
215   $a1 online resource (6 pages) $cillustrations
225 1 $aNASA/TM ;$v1999-209647
300   $a"December 1999."
300   $a"Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."
300   $a"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
320   $aIncludes bibliographical references (page 6).
517 3 $aElectrical impact of silicon carbide structural crystal defects on high electric field devices
606   $aCrystal defects$2nasat
606   $aSilicon$2nasat
606   $aElectric fields$2nasat
606   $aElectrical properties$2nasat
606   $aSwitching$2nasat
615  7$aCrystal defects.
615  7$aSilicon.
615  7$aElectric fields.
615  7$aElectrical properties.
615  7$aSwitching.
700   $aNeudeck$b Philip G.$01420005
712 02$aNASA Glenn Research Center,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910706124003321
996   $aElectrical impact of SiC structural crystal defects on high electric field devices$93536435
997   $aUNINA