01955nam 2200481I 450 991070612400332120170913130840.0(CKB)5470000002455190(OCoLC)1003531351(EXLCZ)99547000000245519020170913j199912 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierElectrical impact of SiC structural crystal defects on high electric field devices /Philip G. NeudeckCleveland, Ohio :National Aeronautics and Space Administration, Glenn Research Center,December 1999.1 online resource (6 pages) illustrationsNASA/TM ;1999-209647"December 1999.""Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999.""Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.Includes bibliographical references (page 6).Electrical impact of silicon carbide structural crystal defects on high electric field devicesCrystal defectsnasatSiliconnasatElectric fieldsnasatElectrical propertiesnasatSwitchingnasatCrystal defects.Silicon.Electric fields.Electrical properties.Switching.Neudeck Philip G.1420005NASA Glenn Research Center,GPOGPOBOOK9910706124003321Electrical impact of SiC structural crystal defects on high electric field devices3536435UNINA