Fundamentals and Recent Advances in Epitaxial Graphene on SiC

• Autore: Yakimova Rositsa
• Pubblicazione: Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
• Descrizione fisica: 1 electronic resource (94 p.)
• Soggetto topico: Technology: general issues
• Soggetto non controllato: epitaxial graphene; copper; redox reaction; electrodeposition; voltammetry; chronoamperometry; DFT; silicon carbide; Raman spectroscopy; 2D peak line shape; G peak; charge density; strain; atomic layer deposition; high-k insulators; ion implantation; Raman; AFM; XPS; graphene; SiC; 3C-SiC on Si; substrate interaction; carrier concentration; mobility; intercalation; buffer layer; surface functionalization; twistronics; twisted bilayer graphene; flat band; epitaxial graphene on SiC; quasi-free-standing graphene; monolayer graphene; high-temperature sublimation; terahertz optical Hall effect; free charge carrier properties; sublimation; electronic properties; material engineering; deposition
• Persona (resp. second.): ShtepliukIvan; YakimovaRositsa
• Sommario/riassunto: This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.
• Titolo autorizzato: Fundamentals and Recent Advances in Epitaxial Graphene on SiC
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910557896703321
• Lo trovi qui: Univ. Federico II