Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C [[electronic resource] /] / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005
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| Autore: |
Niedra Janis M
|
| Titolo: |
Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C [[electronic resource] /] / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005
|
| Pubblicazione: | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2005] |
| Descrizione fisica: | 1 online resource (9 pages) : illustrations |
| Soggetto topico: | Static characteristics |
| Silicon carbides | |
| Transistors | |
| Switching | |
| Electric potential | |
| P-n junctions | |
| Altri autori: |
SchwarzeGene E
|
| Note generali: | Title from title screen (viewed on Jan. 3, 2011). |
| "December 2005." | |
| "AIAA-2005-5718." | |
| Nota di bibliografia: | Includes bibliographical references (page 9) |
| Titolo autorizzato: | Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910697164203321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |
Serie:
NASA technical memorandum ; ; 213996.