02098nam 2200529 a 450 991069716420332120230902161902.0(CKB)5470000002385269(OCoLC)694791364(EXLCZ)99547000000238526920110103d2005 ua 0engurmn|||||||||txtrdacontentcrdamediacrrdacarrierStatic and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C[electronic resource] /Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005Cleveland, Ohio :National Aeronautics and Space Administration, Glenn Research Center,[2005]1 online resource (9 pages) illustrationsNASA/TM- ;2005-213996Title from title screen (viewed on Jan. 3, 2011)."December 2005.""AIAA-2005-5718."Includes bibliographical references (page 9)NASA technical memorandum ;213996.Static characteristicsnasatSilicon carbidesnasatTransistorsnasatSwitchingnasatElectric potentialnasatP-n junctionsnasatStatic characteristics.Silicon carbides.Transistors.Switching.Electric potential.P-n junctions.Niedra Janis M1389258Schwarze Gene E1410246NASA Glenn Research Center.International Energy Conversion Engineering Conference(3rd :2005 :San Francisco, Calif.)GPOGPOBOOK9910697164203321Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C3498562UNINA