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100   $a20110103d2005      ua             0
101 0 $aeng
135   $aurmn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aStatic and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C$b[electronic resource] /$fJanis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$d[2005]
215   $a1 online resource (9 pages) $cillustrations
225 1 $aNASA/TM- ;$v2005-213996
300   $aTitle from title screen (viewed on Jan. 3, 2011).
300   $a"December 2005."
300   $a"AIAA-2005-5718."
320   $aIncludes bibliographical references (page 9)
410  0$aNASA technical memorandum ;$v213996.
606   $aStatic characteristics$2nasat
606   $aSilicon carbides$2nasat
606   $aTransistors$2nasat
606   $aSwitching$2nasat
606   $aElectric potential$2nasat
606   $aP-n junctions$2nasat
615  7$aStatic characteristics.
615  7$aSilicon carbides.
615  7$aTransistors.
615  7$aSwitching.
615  7$aElectric potential.
615  7$aP-n junctions.
700   $aNiedra$b Janis M$01389258
701   $aSchwarze$b Gene E$01410246
712 02$aNASA Glenn Research Center.
712 12$aInternational Energy Conversion Engineering Conference$d(3rd :$f2005 :$eSan Francisco, Calif.)
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910697164203321
996   $aStatic and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C$93498562
997   $aUNINA