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Advances in Chemical Vapor Deposition



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Autore: Vernardou Dimitra Visualizza persona
Titolo: Advances in Chemical Vapor Deposition Visualizza cluster
Pubblicazione: Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica: 1 electronic resource (94 p.)
Soggetto topico: Technology: general issues
Soggetto non controllato: APCVD
VO2
processing parameters
2D
chemical vapor deposition
atomic layer deposition
aluminum oxide
aluminum tri-sec-butoxide
thin film
carbon nanotubes
residual gas adsorption
residual gas desorption
field emission
atmospheric pressure CVD
low pressure CVD
hybrid CVD
aerosol assisted CVD
pulsed CVD
perovskite photovoltaic nanomaterials
stabilization
structural design
performance optimization
solar cells
anatase single crystals
process-induced nanostructures
competitive growth
pp-MOCVD
vanadium pentoxide
electrochromic
spray pyrolysis
ammonium metavanadate
CVD
electrochromism
perovskite photovoltaic materials
TiO2
Al2O3
V2O5
computational fluid dynamics
Persona (resp. second.): VernardouDimitra
Sommario/riassunto: Pursuing a scalable production methodology for materials and advancing it from the laboratory to industry is beneficial to novel daily-life applications. From this perspective, chemical vapor deposition (CVD) offers a compromise between efficiency, controllability, tunability and excellent run-to-run repeatability in the coverage of monolayers on substrates. Hence, CVD meets all of the requirements for industrialization in basically all areas, including polymer coatings, metals, water-filtration systems, solar cells and so on. The Special Issue “Advances in Chemical Vapor Deposition” is dedicated to providing an overview of the latest experimental findings and identifying the growth parameters and characteristics of perovskites, TiO2, Al2O3, VO2 and V2O5 with desired qualities for potentially useful devices.
Titolo autorizzato: Advances in Chemical Vapor Deposition  Visualizza cluster
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910557748803321
Lo trovi qui: Univ. Federico II
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