Differentiated layout styles for MOSFETs : electrical behavior in harsh environments / / Salvador Pinillos Gimenez and Egon Henrique Salerno Galembeck
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| Autore: |
Gimenez Salvador Pinillos <1962->
|
| Titolo: |
Differentiated layout styles for MOSFETs : electrical behavior in harsh environments / / Salvador Pinillos Gimenez and Egon Henrique Salerno Galembeck
|
| Pubblicazione: | Cham, Switzerland : , : Springer Nature Switzerland AG, , [2023] |
| ©2023 | |
| Edizione: | 1st ed. 2023. |
| Descrizione fisica: | 1 online resource (216 pages) |
| Disciplina: | 621.3815284 |
| Soggetto topico: | Metal oxide semiconductor field-effect transistors |
| Persona (resp. second.): | GalembeckEgon Henrique Salerno |
| Nota di bibliografia: | Includes bibliographical references and index. |
| Nota di contenuto: | Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation. |
| Sommario/riassunto: | This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that don’t entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment. |
| Titolo autorizzato: | Differentiated layout styles for MOSFETs |
| ISBN: | 9783031290862 |
| 9783031290855 | |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910720089103321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |