LEADER 03277nam 2200481 450 001 9910720089103321 005 20230803203002.0 010 $a9783031290862$b(electronic bk.) 010 $z9783031290855 024 7 $a10.1007/978-3-031-29086-2 035 $a(MiAaPQ)EBC7246204 035 $a(Au-PeEL)EBL7246204 035 $a(DE-He213)978-3-031-29086-2 035 $a(OCoLC)1378936111 035 $a(OCoLC)1379207174 035 $a(PPN)270619682 035 $a(EXLCZ)9926592058000041 100 $a20230803d2023 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDifferentiated layout styles for MOSFETs $eelectrical behavior in harsh environments /$fSalvador Pinillos Gimenez and Egon Henrique Salerno Galembeck 205 $a1st ed. 2023. 210 1$aCham, Switzerland :$cSpringer Nature Switzerland AG,$d[2023] 210 4$dİ2023 215 $a1 online resource (216 pages) 311 08$aPrint version: Gimenez, Salvador Pinillos Differentiated Layout Styles for MOSFETs Cham : Springer International Publishing AG,c2023 9783031290855 320 $aIncludes bibliographical references and index. 327 $aChapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation. 330 $aThis book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that don?t entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment. 606 $aMetal oxide semiconductor field-effect transistors 615 0$aMetal oxide semiconductor field-effect transistors. 676 $a621.3815284 700 $aGimenez$b Salvador Pinillos$f1962-$01378941 702 $aGalembeck$b Egon Henrique Salerno 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 912 $a9910720089103321 996 $aDifferentiated layout styles for MOSFETs$93418172 997 $aUNINA