03277nam 2200481 450 991072008910332120230803203002.09783031290862(electronic bk.)978303129085510.1007/978-3-031-29086-2(MiAaPQ)EBC7246204(Au-PeEL)EBL7246204(DE-He213)978-3-031-29086-2(OCoLC)1378936111(OCoLC)1379207174(PPN)270619682(EXLCZ)992659205800004120230803d2023 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierDifferentiated layout styles for MOSFETs electrical behavior in harsh environments /Salvador Pinillos Gimenez and Egon Henrique Salerno Galembeck1st ed. 2023.Cham, Switzerland :Springer Nature Switzerland AG,[2023]©20231 online resource (216 pages)Print version: Gimenez, Salvador Pinillos Differentiated Layout Styles for MOSFETs Cham : Springer International Publishing AG,c2023 9783031290855 Includes bibliographical references and index.Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that don’t entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.Metal oxide semiconductor field-effect transistorsMetal oxide semiconductor field-effect transistors.621.3815284Gimenez Salvador Pinillos1962-1378941Galembeck Egon Henrique SalernoMiAaPQMiAaPQMiAaPQ9910720089103321Differentiated layout styles for MOSFETs3418172UNINA