Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors / / by Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao

• Autore: Dinh Toan
• Pubblicazione: Singapore : , : Springer Singapore : , : Imprint : Springer, , 2018
• Edizione: 1st ed. 2018.
• Descrizione fisica: 1 online resource (122 pages)
• Disciplina: 547.08
• Soggetto topico: Nanotechnology; Solid state physics; Nanotechnology and Microengineering; Solid State Physics
• Persona (resp. second.): NguyenNam-Trung; DaoDzung Viet
• Nota di contenuto: Introduction to SiC and Thermoelectrical Properties -- Fundamentals of Thermoelectrical Effect in SiC -- Desirable Features for High Temperature SiC Sensors -- Fabrication of SiC MEMS Sensors -- Impact of Design and Process on Performance of SiC Thermal Devices -- Applications of Thermoelectrical Effect in SiC -- Future prospects of SiC Thermoelectrical Sensing Devices.
• Sommario/riassunto: This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.
• Titolo autorizzato: Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors
• ISBN: 981-13-2571-5
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910298592903321
• Lo trovi qui: Univ. Federico II
• Serie: SpringerBriefs in Applied Sciences and Technology, . 2191-530X