1.

Record Nr.

UNINA9910298592903321

Autore

Dinh Toan

Titolo

Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors / / by Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao

Pubbl/distr/stampa

Singapore : , : Springer Singapore : , : Imprint : Springer, , 2018

ISBN

981-13-2571-5

Edizione

[1st ed. 2018.]

Descrizione fisica

1 online resource (122 pages)

Collana

SpringerBriefs in Applied Sciences and Technology, , 2191-530X

Disciplina

547.08

Soggetti

Nanotechnology

Solid state physics

Nanotechnology and Microengineering

Solid State Physics

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Nota di contenuto

Introduction to SiC and Thermoelectrical Properties -- Fundamentals of Thermoelectrical Effect in SiC -- Desirable Features for High Temperature SiC Sensors -- Fabrication of SiC MEMS Sensors -- Impact of Design and Process on Performance of SiC Thermal Devices -- Applications of Thermoelectrical Effect in SiC -- Future prospects of SiC Thermoelectrical Sensing Devices.

Sommario/riassunto

This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.