Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / Byung-Eun Park … [et al.] editors]
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| Titolo: |
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications / Byung-Eun Park … [et al.] editors]
|
| Pubblicazione: | Dordrecht, : Springer, 2016 |
| Titolo uniforme: | Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications |
| Descrizione fisica: | xviii, 347 p. : ill. ; 24 cm |
| Soggetto topico: | 74-XX - Mechanics of deformable solids [MSC 2020] |
| 00A79 (77-XX) - Physics [MSC 2020] | |
| 74K35 - Thin films [MSC 2020] | |
| Soggetto non controllato: | Ferroelectric-gate Field Effect Transistors |
| Field Effect Transistors with flexible | |
| Inorganic Ferroelectric-gate FETs | |
| NAND-type Memory Circuits | |
| Non-memory Devices | |
| One-Transistor Type | |
| Organic Ferroelectric-gate FETs | |
| Si-Based Ferroelectric-gate FETs | |
| Thin film-Based Ferroelectric-gate FETs | |
| Persona (resp. second.): | Park, Byung-Eun |
| Titolo autorizzato: | Ferroelectric-Gate Field Effect Transistor Memories |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | VAN0177798 |
| Lo trovi qui: | Univ. Vanvitelli |
| Localizzazioni e accesso elettronico | http://doi.org/10.1007/978-94-024-0841-6 |
| Opac: | Controlla la disponibilità qui |
Serie:
Topics in Applied Physics Berlin [etc.] . -Springer ; 131