LEADER 02101nam0 22004453i 450 001 VAN0177798 005 20230616090924.933 017 70$2N$a9789402408416 100 $a20210708d2016 |0itac50 ba 101 $aeng 102 $aNL 105 $a|||| ||||| 200 1 $aFerroelectric-Gate Field Effect Transistor Memories$eDevice Physics and Applications$fByung-Eun Park ?$bet al.] editors 210 $aDordrecht$cSpringer$d2016 215 $axviii, 347 p.$cill.$d24 cm 410 1$1001VAN0132707$12001 $aTopics in Applied Physics$1210 $aBerlin [etc.]$cSpringer$v131 500 1$3VAN0177799$aFerroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications$91933884 606 $a74-XX$xMechanics of deformable solids [MSC 2020]$3VANC022466$2MF 606 $a00A79 (77-XX)$xPhysics [MSC 2020]$3VANC023182$2MF 606 $a74K35$xThin films [MSC 2020]$3VANC033952$2MF 610 $aFerroelectric-gate Field Effect Transistors$9KW:K 610 $aField Effect Transistors with flexible$9KW:K 610 $aInorganic Ferroelectric-gate FETs$9KW:K 610 $aNAND-type Memory Circuits$9KW:K 610 $aNon-memory Devices$9KW:K 610 $aOne-Transistor Type$9KW:K 610 $aOrganic Ferroelectric-gate FETs$9KW:K 610 $aSi-Based Ferroelectric-gate FETs$9KW:K 610 $aThin film-Based Ferroelectric-gate FETs$9KW:K 620 $aNL$dDordrecht$3VANL000068 702 1$aPark$bByung-Eun$3VANV160070 712 $aSpringer $3VANV108073$4650 801 $aIT$bSOL$c20240614$gRICA 856 4 $uhttp://doi.org/10.1007/978-94-024-0841-6$zE-book ? Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o Shibboleth 899 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$1IT-CE0120$2VAN08 912 $fN 912 $aVAN0177798 950 $aBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA$d08CONS e-book 2948 $e08eMF2948 20210708 996 $aFerroelectric-Gate Field Effect Transistor Memories$91933884 997 $aUNICAMPANIA