02101nam0 22004453i 450 VAN017779820230616090924.933N978940240841620210708d2016 |0itac50 baengNL|||| |||||Ferroelectric-Gate Field Effect Transistor MemoriesDevice Physics and ApplicationsByung-Eun Park …et al.] editorsDordrechtSpringer2016xviii, 347 p.ill.24 cm001VAN01327072001 Topics in Applied Physics210 Berlin [etc.]Springer131VAN0177799Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications193388474-XXMechanics of deformable solids [MSC 2020]VANC022466MF00A79 (77-XX)Physics [MSC 2020]VANC023182MF74K35Thin films [MSC 2020]VANC033952MFFerroelectric-gate Field Effect TransistorsKW:KField Effect Transistors with flexibleKW:KInorganic Ferroelectric-gate FETsKW:KNAND-type Memory CircuitsKW:KNon-memory DevicesKW:KOne-Transistor TypeKW:KOrganic Ferroelectric-gate FETsKW:KSi-Based Ferroelectric-gate FETsKW:KThin film-Based Ferroelectric-gate FETsKW:KNLDordrechtVANL000068ParkByung-EunVANV160070Springer <editore>VANV108073650ITSOL20240614RICAhttp://doi.org/10.1007/978-94-024-0841-6E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN0177798BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08CONS e-book 2948 08eMF2948 20210708 Ferroelectric-Gate Field Effect Transistor Memories1933884UNICAMPANIA