Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect / / by Jie Cheng

• Autore: Cheng Jie
• Pubblicazione: Singapore : , : Springer Singapore : , : Imprint : Springer, , 2018
• Edizione: 1st ed. 2018.
• Descrizione fisica: 1 online resource (XVIII, 137 p. 103 illus.)
• Disciplina: 621.38152
• Soggetto topico: Manufactures; Tribology; Corrosion and anti-corrosives; Coatings; Electronics; Microelectronics; Manufacturing, Machines, Tools, Processes; Tribology, Corrosion and Coatings; Electronics and Microelectronics, Instrumentation
• Nota di bibliografia: Includes bibliographical references.
• Sommario/riassunto: This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
• Titolo autorizzato: Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
• ISBN: 981-10-6165-3
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910299588803321
• Lo trovi qui: Univ. Federico II
• Serie: Springer Theses, Recognizing Outstanding Ph.D. Research, . 2190-5053