RF and microwave modeling and measurement techniques for field effect transistors / / Jianjun Gao

• Autore: Gao Jianjun <1968->
• Pubblicazione: Raleigh, NC, : SciTech Pub., c2010
• Descrizione fisica: 1 online resource (351 p.)
• Disciplina: 621.3815/284
• Soggetto topico: Field-effect transistors - Testing; Compound semiconductors - Testing; Field-effect transistors - Mathematical models; Compound semiconductors - Mathematical models; Microwave measurements; Radio measurements
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Contents; Preface; Chapter 1 - Introduction; Chapter 2 - Representation of Microwave Two-Port Network; Chapter 3 - Microwave and RF Measurement Techniques; Chapter 4 - FET Small Signal Modeling and ParameterExtraction; Chapter 5 - FET Nonlinear Modeling and ParameterExtraction; Chapter 6 - Microwave Noise Modeling and ParameterExtraction Technique for FETs; Chapter 7 - Artificial Neural Network Modeling Techniquefor FET; References; Index
• Sommario/riassunto: This book is an introduction to microwave and RF signal modeling and measurement techniques for field effect transistors. It assumes only a basic course in electronic circuits and prerequisite knowledge for readers to apply the techniques and improve the performance of integrated circuits, reduce design cycles and increase their chance at first time success. The first chapters offer a general overview and discussion of microwave signal and noise matrices, and microwave measurement techniques. The following chapters address modeling techniques for field effect transistors and cover models such
• Titolo autorizzato: RF and microwave modeling and measurement techniques for field effect transistors
• ISBN: 1-61353-090-0; 1-61344-286-6
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9911006694703321
• Lo trovi qui: Univ. Federico II