Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors / / Karl Schneider
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| Autore: |
Schneider Karl
|
| Titolo: |
Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors / / Karl Schneider
|
| Pubblicazione: | Karlsruhe : , : KIT Scientific Publishing, , 2006 |
| Descrizione fisica: | 1 online resource (vi, 132 pages) |
| Disciplina: | 621.3 |
| Soggetto topico: | Bipolar integrated circuits |
| Sommario/riassunto: | This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers. |
| Titolo autorizzato: | Broadband amplifiers for high data rates using InP |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910688213003321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |