LEADER 01549nam  2200337   450 
001 9910688213003321
005 20230703191219.0
035   $a(CKB)5400000000043197
035   $a(NjHacI)995400000000043197
035   $a(EXLCZ)995400000000043197
100   $a20230703d2006      uy             0
101 0 $aeng
135   $aur|||||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aBroadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors /$fKarl Schneider
210  1$aKarlsruhe :$cKIT Scientific Publishing,$d2006.
215   $a1 online resource (vi, 132 pages)
311   $a1000004373 
330   $aThis work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.
606   $aBipolar integrated circuits
615  0$aBipolar integrated circuits.
676   $a621.3
700   $aSchneider$b Karl$0387008
801  0$bNjHacI
801  1$bNjHacl
906   $aBOOK
912   $a9910688213003321
996   $aBroadband amplifiers for high data rates using InP$93395022
997   $aUNINA