01549nam 2200337 450 991068821300332120230703191219.0(CKB)5400000000043197(NjHacI)995400000000043197(EXLCZ)99540000000004319720230703d2006 uy 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierBroadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors /Karl SchneiderKarlsruhe :KIT Scientific Publishing,2006.1 online resource (vi, 132 pages)1000004373 This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.Bipolar integrated circuitsBipolar integrated circuits.621.3Schneider Karl387008NjHacINjHaclBOOK9910688213003321Broadband amplifiers for high data rates using InP3395022UNINA