Semiconductor Infrared Devices and Applications

• Autore: Perera A. G. Unil
• Pubblicazione: Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
• Descrizione fisica: 1 electronic resource (110 p.)
• Soggetto topico: Technology: general issues
• Soggetto non controllato: microbolometer; infrared sensor; complementary metal-oxide semiconductor (CMOS); high sensitivity; temperature sensor; microresonator; MEMS; clamped-clamped beam; thermal detector; Infrared detector; strained layer superlattice; InAs/InAsSb; absorption coefficient; barrier detector; high operating temperature; manganite; heterostructure; photodetector; heterostructures; split-off band; wavelength extension; device performance; ultrasound transducer; photoacoustic imaging; piezoelectric; micromachined; CMUT; PMUT; optical ultrasound detection; type-II superlattice; infrared detector; mid-wavelength infrared (MWIR); unipolar barrier; InAs/GaSb; T2SL; IR; TE-cooled; spectroscopy; RoHS; MCT
• Persona (resp. second.): PereraA. G. Unil
• Sommario/riassunto: Infrared (IR) technologies—from Herschel’s initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe—have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These include astronomy applications; composition identifications; toxic gas and explosive detection; medical diagnostics; and industrial, commercial, imaging, and security applications. Various types of semiconductor-based (including quantum well, dot, ring, wire, dot in well, hetero and/or homo junction, Type II super lattice, and Schottky) IR (photon) detectors, based on various materials (type IV, III-V, and II-VI), have been developed to satisfy these needs. Currently, room temperature detectors operating over a wide wavelength range from near IR to terahertz are available in various forms, including focal plane array cameras. Recent advances include performance enhancements by using surface Plasmon and ultrafast, high-sensitivity 2D materials for infrared sensing. Specialized detectors with features such as multiband, selectable wavelength, polarization sensitive, high operating temperature, and high performance (including but not limited to very low dark currents) are also being developed. This Special Issue highlights advances in these various types of infrared detectors based on various material systems.
• Titolo autorizzato: Semiconductor Infrared Devices and Applications
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910566475503321
• Lo trovi qui: Univ. Federico II