00812nam0-22002891i-450-99000752410040332120060420151727.0000752410FED01000752410(Aleph)000752410FED0100075241020030814d1967----km-y0itay50------baitaITa-------001yy<<La >>Calabria nella preistoriaDario Leonepresent. di Giuseppe FotiBellavista (Na)Athenac 196797 p., 12 c. di fot.23 cmCalabriaStoriaLeone,Dario271784ITUNINARICAUNIMARCBK990007524100403321E-08-053Ist.8981ILFGEILFGECalabria nella preistoria684036UNINA03800nam 2200829z- 450 991056647550332120220506(CKB)5680000000037624(oapen)https://directory.doabooks.org/handle/20.500.12854/81100(oapen)doab81100(EXLCZ)99568000000003762420202205d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierSemiconductor Infrared Devices and ApplicationsBaselMDPI - Multidisciplinary Digital Publishing Institute20221 online resource (110 p.)3-0365-3353-2 3-0365-3354-0 Infrared (IR) technologies-from Herschel's initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe-have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These include astronomy applications; composition identifications; toxic gas and explosive detection; medical diagnostics; and industrial, commercial, imaging, and security applications. Various types of semiconductor-based (including quantum well, dot, ring, wire, dot in well, hetero and/or homo junction, Type II super lattice, and Schottky) IR (photon) detectors, based on various materials (type IV, III-V, and II-VI), have been developed to satisfy these needs. Currently, room temperature detectors operating over a wide wavelength range from near IR to terahertz are available in various forms, including focal plane array cameras. Recent advances include performance enhancements by using surface Plasmon and ultrafast, high-sensitivity 2D materials for infrared sensing. Specialized detectors with features such as multiband, selectable wavelength, polarization sensitive, high operating temperature, and high performance (including but not limited to very low dark currents) are also being developed. This Special Issue highlights advances in these various types of infrared detectors based on various material systems.Technology: general issuesbicsscabsorption coefficientbarrier detectorclamped-clamped beamCMUTcomplementary metal-oxide semiconductor (CMOS)device performanceheterostructureheterostructureshigh operating temperaturehigh sensitivityInAs/GaSbInAs/InAsSbinfrared detectorInfrared detectorinfrared sensorIRmanganiteMCTMEMSmicrobolometermicromachinedmicroresonatormid-wavelength infrared (MWIR)n/aoptical ultrasound detectionphotoacoustic imagingphotodetectorpiezoelectricPMUTRoHSspectroscopysplit-off bandstrained layer superlatticeT2SLTE-cooledtemperature sensorthermal detectortype-II superlatticeultrasound transducerunipolar barrierwavelength extensionTechnology: general issuesPerera A. G. Uniledt1314111Perera A. G. UnilothBOOK9910566475503321Semiconductor Infrared Devices and Applications3031718UNINA