LEADER 03800nam  2200829z- 450 
001 9910566475503321
005 20220506
035   $a(CKB)5680000000037624
035   $a(oapen)https://directory.doabooks.org/handle/20.500.12854/81100
035   $a(oapen)doab81100
035   $a(EXLCZ)995680000000037624
100   $a20202205d2022      |y         0
101 0 $aeng
135   $aurmn|---annan
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aSemiconductor Infrared Devices and Applications
210   $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022
215   $a1 online resource (110 p.)
311 08$a3-0365-3353-2 
311 08$a3-0365-3354-0 
330   $aInfrared (IR) technologies-from Herschel's initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe-have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These include astronomy applications; composition identifications; toxic gas and explosive detection; medical diagnostics; and industrial, commercial, imaging, and security applications. Various types of semiconductor-based (including quantum well, dot, ring, wire, dot in well, hetero and/or homo junction, Type II super lattice, and Schottky) IR (photon) detectors, based on various materials (type IV, III-V, and II-VI), have been developed to satisfy these needs. Currently, room temperature detectors operating over a wide wavelength range from near IR to terahertz are available in various forms, including focal plane array cameras. Recent advances include performance enhancements by using surface Plasmon and ultrafast, high-sensitivity 2D materials for infrared sensing. Specialized detectors with features such as multiband, selectable wavelength, polarization sensitive, high operating temperature, and high performance (including but not limited to very low dark currents) are also being developed. This Special Issue highlights advances in these various types of infrared detectors based on various material systems.
606   $aTechnology: general issues$2bicssc
610   $aabsorption coefficient
610   $abarrier detector
610   $aclamped-clamped beam
610   $aCMUT
610   $acomplementary metal-oxide semiconductor (CMOS)
610   $adevice performance
610   $aheterostructure
610   $aheterostructures
610   $ahigh operating temperature
610   $ahigh sensitivity
610   $aInAs/GaSb
610   $aInAs/InAsSb
610   $ainfrared detector
610   $aInfrared detector
610   $ainfrared sensor
610   $aIR
610   $amanganite
610   $aMCT
610   $aMEMS
610   $amicrobolometer
610   $amicromachined
610   $amicroresonator
610   $amid-wavelength infrared (MWIR)
610   $an/a
610   $aoptical ultrasound detection
610   $aphotoacoustic imaging
610   $aphotodetector
610   $apiezoelectric
610   $aPMUT
610   $aRoHS
610   $aspectroscopy
610   $asplit-off band
610   $astrained layer superlattice
610   $aT2SL
610   $aTE-cooled
610   $atemperature sensor
610   $athermal detector
610   $atype-II superlattice
610   $aultrasound transducer
610   $aunipolar barrier
610   $awavelength extension
615  7$aTechnology: general issues
700   $aPerera$b A. G. Unil$4edt$01314111
702   $aPerera$b A. G. Unil$4oth
906   $aBOOK
912   $a9910566475503321
996   $aSemiconductor Infrared Devices and Applications$93031718
997   $aUNINA