Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao

• Autore: Gao Jianjun <1968->
• Pubblicazione: Singapore : , : John Wiley and Sons, Incorporated, , 2015
• Descrizione fisica: 1 online resource (278 p.)
• Disciplina: 621.3815/28
• Soggetto topico: Bipolar transistors; Heterojunctions; Electronic circuit design; Microwave measurements
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources ; 2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept ; 3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction ; 4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 π-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance ; 5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model ; 6.4.3 Macromodeling Method
• Titolo autorizzato: Heterojunction bipolar transistors for circuit design
• ISBN: 1-118-92153-4; 1-118-92155-0
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910822337003321
• Lo trovi qui: Univ. Federico II