LEADER 04920nam 2200685 450 001 9910822337003321 005 20230807210330.0 010 $a1-118-92153-4 010 $a1-118-92155-0 035 $a(CKB)2670000000613974 035 $a(EBL)2037987 035 $a(SSID)ssj0001482077 035 $a(PQKBManifestationID)11823372 035 $a(PQKBTitleCode)TC0001482077 035 $a(PQKBWorkID)11508252 035 $a(PQKB)11627755 035 $a(MiAaPQ)EBC4039880 035 $a(MiAaPQ)EBC2037987 035 $a(DLC) 2015006217 035 $a(Au-PeEL)EBL4039880 035 $a(CaPaEBR)ebr11113278 035 $a(CaONFJC)MIL779419 035 $a(OCoLC)903582747 035 $a(EXLCZ)992670000000613974 100 $a20150212d2015 uy| 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aHeterojunction bipolar transistors for circuit design $emicrowave modelling and parameter extraction /$fJianjun Gao 210 1$aSingapore :$cJohn Wiley and Sons, Incorporated,$d2015. 215 $a1 online resource (278 p.) 300 $aDescription based upon print version of record. 311 $a1-118-92154-2 311 $a1-118-92152-6 320 $aIncludes bibliographical references and index. 327 $aTitle Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources 327 $a2.3.5 Ideal Transmission Line2.4 ?- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 ?-Type Network; 2.4.3 Relationship between ?- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept 327 $a3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction 327 $a4.2 HBT Device4.2.1 GaAs HBT; 4.2.2 InP HBT; 4.3 Summary; References; Chapter 5 Small-Signal Modeling and Parameter Extraction of HBT; 5.1 Small-Signal Circuit Model; 5.1.1 Pad Structure; 5.1.2 T-Type Circuit Model; 5.1.3 ?-Type Circuit Model; 5.1.4 Unilateral Power Gain; 5.1.5 fT and fmax; 5.2 HBT Device Structure; 5.3 Extraction Method of PAD Capacitances; 5.3.1 Open Test Structure Method; 5.3.2 Pinch-Off Method; 5.4 Extraction Method of Extrinsic Inductances; 5.4.1 Short Test Structure Method; 5.4.2 Open-Collector Method; 5.5 Extraction Method of Extrinsic Resistance 327 $a5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model 327 $a6.4.3 Macromodeling Method 606 $aBipolar transistors 606 $aHeterojunctions 606 $aElectronic circuit design 606 $aMicrowave measurements 615 0$aBipolar transistors. 615 0$aHeterojunctions. 615 0$aElectronic circuit design. 615 0$aMicrowave measurements. 676 $a621.3815/28 700 $aGao$b Jianjun$f1968-$01617788 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910822337003321 996 $aHeterojunction bipolar transistors for circuit design$93954702 997 $aUNINA