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Record Nr. |
UNINA9910822337003321 |
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Autore |
Gao Jianjun <1968-> |
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Titolo |
Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / / Jianjun Gao |
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Pubbl/distr/stampa |
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Singapore : , : John Wiley and Sons, Incorporated, , 2015 |
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ISBN |
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1-118-92153-4 |
1-118-92155-0 |
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Descrizione fisica |
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1 online resource (278 p.) |
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Disciplina |
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Soggetti |
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Bipolar transistors |
Heterojunctions |
Electronic circuit design |
Microwave measurements |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources |
2.3.5 Ideal Transmission Line2.4 π- and T-Type Networks; 2.4.1 T-Type Network; 2.4.2 π-Type Network; 2.4.3 Relationship between π- and T-Type Networks; 2.5 Deembedding Method; 2.5.1 Parallel Deembedding; 2.5.2 Series Deembedding; 2.5.3 Cascading Deembedding; 2.6 Basic Methods of Parameter Extraction; 2.6.1 Determination of Capacitance; 2.6.2 Determination of Inductance; 2.6.3 Determination of Resistance; 2.7 Summary; References; Chapter 3 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor; 3.1 PN Junction; 3.2 PN Junction Diode; 3.2.1 Basic Concept |
3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; |
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