Advances in Porous Semiconductor Research
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| Autore: |
Djenizian Thierry
|
| Titolo: |
Advances in Porous Semiconductor Research
|
| Pubblicazione: | Frontiers Media SA, 2020 |
| Descrizione fisica: | 1 electronic resource (183 p.) |
| Soggetto topico: | Science: general issues |
| Soggetto non controllato: | semiconductor |
| porous material | |
| microfabrication | |
| nanomaterials | |
| Nanotechnologies | |
| Persona (resp. second.): | Hans VoelckerNicolas |
| DjenizianThierry | |
| Sommario/riassunto: | Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine. |
| Titolo autorizzato: | Advances in Porous Semiconductor Research |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910557740303321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |