LEADER 01596nam  2200409z- 450 
001 9910557740303321
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035   $a(CKB)5400000000045939
035   $a(oapen)https://directory.doabooks.org/handle/20.500.12854/73791
035   $a(oapen)doab73791
035   $a(EXLCZ)995400000000045939
100   $a20202111d2020      |y         0
101 0 $aeng
135   $aurmn|---annan
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aAdvances in Porous Semiconductor Research
210   $cFrontiers Media SA$d2020
215   $a1 online resource (183 p.)
311 08$a2-88963-649-6 
330   $aSince the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine.
606   $aScience: general issues$2bicssc
610   $amicrofabrication
610   $ananomaterials
610   $aNanotechnologies
610   $aporous material
610   $asemiconductor
615  7$aScience: general issues
700   $aDjenizian$b Thierry$4edt$01292444
702   $aHans Voelcker$b Nicolas$4edt
702   $aDjenizian$b Thierry$4oth
702   $aHans Voelcker$b Nicolas$4oth
906   $aBOOK
912   $a9910557740303321
996   $aAdvances in Porous Semiconductor Research$93022316
997   $aUNINA