LEADER 01579nam 2200397z- 450 001 9910557740303321 005 20231214133305.0 035 $a(CKB)5400000000045939 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/73791 035 $a(EXLCZ)995400000000045939 100 $a20202111d2020 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aAdvances in Porous Semiconductor Research 210 $cFrontiers Media SA$d2020 215 $a1 electronic resource (183 p.) 311 $a2-88963-649-6 330 $aSince the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine. 606 $aScience: general issues$2bicssc 610 $asemiconductor 610 $aporous material 610 $amicrofabrication 610 $ananomaterials 610 $aNanotechnologies 615 7$aScience: general issues 700 $aDjenizian$b Thierry$4edt$01292444 702 $aHans Voelcker$b Nicolas$4edt 702 $aDjenizian$b Thierry$4oth 702 $aHans Voelcker$b Nicolas$4oth 906 $aBOOK 912 $a9910557740303321 996 $aAdvances in Porous Semiconductor Research$93022316 997 $aUNINA