01579nam 2200397z- 450 991055774030332120231214133305.0(CKB)5400000000045939(oapen)https://directory.doabooks.org/handle/20.500.12854/73791(EXLCZ)99540000000004593920202111d2020 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierAdvances in Porous Semiconductor ResearchFrontiers Media SA20201 electronic resource (183 p.)2-88963-649-6 Since the discovery of the luminescent properties of porous Si by L. Canham in 1990, the anodization process has attracted enormous interest for the fabrication of porous semiconductors. To date, this technique has been widely used to design new materials with advanced physico-chemical properties for many applications in optics, microelectronics, energy, biology and medicine.Science: general issuesbicsscsemiconductorporous materialmicrofabricationnanomaterialsNanotechnologiesScience: general issuesDjenizian Thierryedt1292444Hans Voelcker NicolasedtDjenizian ThierryothHans Voelcker NicolasothBOOK9910557740303321Advances in Porous Semiconductor Research3022316UNINA