Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons / / by Marvin E. Beatty
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| Autore: |
Beatty Marvin E.
|
| Titolo: |
Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons / / by Marvin E. Beatty
|
| Pubblicazione: | Washington, D.C. : , : National Aeronautics and Space Administration, , February 1969 |
| Descrizione fisica: | 1 online resource (25 pages) : illustrations |
| Soggetto topico: | Gallium arsenide - Effect of radiation on |
| Extraterrestrial radiation | |
| Semiconductors - Effect of radiation on | |
| Silicon - Effect of radiation on | |
| Note generali: | "February 1969." |
| Nota di bibliografia: | Includes bibliographical references (pages 15-16). |
| Titolo autorizzato: | Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910714046203321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |