02035oam 2200553I 450 991071404620332120201211101442.0(CKB)5470000002507185(OCoLC)785280925(EXLCZ)99547000000250718520120408j196902 ua 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierChanges in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons /by Marvin E. BeattyWashington, D.C. :National Aeronautics and Space Administration,February 1969.1 online resource (25 pages) illustrationsNASA technical note ;NASA TN D-5028"February 1969."Includes bibliographical references (pages 15-16).Gallium arsenideEffect of radiation onExtraterrestrial radiationSemiconductorsEffect of radiation onExtraterrestrial radiationfastSemiconductorsEffect of radiation onfastSiliconEffect of radiation onfastGallium arsenideEffect of radiation on.Extraterrestrial radiation.SemiconductorsEffect of radiation on.Extraterrestrial radiation.SemiconductorsEffect of radiation on.SiliconEffect of radiation on.Beatty Marvin E.1394464United States.National Aeronautics and Space Administration,OCLCEOCLCEOCLCQOCLCOOCLCQOCLCFOCLCQCOPGPOBOOK9910714046203321Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons3487446UNINA