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Tantalum and Niobium-Based Capacitors : Science, Technology, and Applications / / by Yuri Freeman



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Autore: Freeman Yuri Visualizza persona
Titolo: Tantalum and Niobium-Based Capacitors : Science, Technology, and Applications / / by Yuri Freeman Visualizza cluster
Pubblicazione: Cham : , : Springer International Publishing : , : Imprint : Springer, , 2018
Edizione: 1st ed. 2018.
Descrizione fisica: 1 online resource (XIX, 120 p. 109 illus., 57 illus. in color.)
Disciplina: 621.3815
Soggetto topico: Electronic circuits
Electronics
Microelectronics
Circuits and Systems
Electronic Circuits and Devices
Electronics and Microelectronics, Instrumentation
Nota di bibliografia: Includes bibliographical references and index.
Nota di contenuto: Introduction -- Chap1:  Major Degradation Mechanisms -- Chap2: Basic Technology -- Chap3: Applications -- Conclusion.
Sommario/riassunto: This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters technology chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications discussed include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated.  The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc. Provides a single-source reference to the science, technology, and applications of Tantalum and Niobium-based capacitors; Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics; Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metal-insulator-semiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics.
Titolo autorizzato: Tantalum and Niobium-Based Capacitors  Visualizza cluster
ISBN: 3-319-67870-1
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910299877403321
Lo trovi qui: Univ. Federico II
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