Physics and modeling of tera-and nano-devices / / editors, Maxim Ryzhii, Victor Ryzhii

• Pubblicazione: Singapore, : World Scientific, c2008
• Edizione: 1st ed.
• Descrizione fisica: 1 online resource (194 p.)
• Disciplina: 620.5
• Soggetto topico: Nanoscience; Nanotechnology; Nanostructured materials; Terahertz technology; Optoelectronics; Optoelectronic devices
• Altri autori: RyzhiiMaxim RyzhiiVictor
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references.
• Nota di contenuto: CONTENTS; Preface; Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires D. K . Ferry, R . Akis, M. J . Gilbert, A . Cummings and S. M. Ramey; 1. Introduction; 2. Discrete Impurity Scattering Effects; 3. Ballistic Transport in Nano-Devices; 4. Nanowire Devices; 5. Conclusions; References; Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors N. Kirova; 1. Introduction; 2. Junction with Isotropic Semiconductor; 3. Surface Long Range Polarons in Molecular Crystals; 4. Junction with Conducting Polymer; 5. Conclusions; References ; Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices S. M. Goodnick and M. Saraniti1. Introduction; 2. Cellular Monte Carlo Method; 3. High Field Transport; 4. CMC Device Modeling; 4.1. SOI and GOI MOSFETs; 4.2. AlGaN/GaN HFETs; Acknowledgments; References; Nanoelectronic Device Simulation Based on the Wigner Function Formalism H. Kosina; 1. Introduction; 2. The Physical Model; 3. Numerical Methods; 3.1. Particle Generation; 3.2. Particle Annihilation; 3.3. Coupling to the Poisson Equation; 4. Results; 5 . Discussion; 5.1. Interpretation of the Results ; 5.2. The Bound-states Problem6. Conclusions; Acknowledgment; References; Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org S. Ahmed, G. Klimeck, D. Kearney, M. McLennan and M. P. Anantram; 1. Introduction; 2. Nanoscale Device Simulation: Quantum Effects; 3. Community Nanoscale MOSFET Softwares; 3.1 nanoFET; 3.2 nanoMOS; 3.3 QuaMC; 4. Simulation Results and Discussion; 5. Conclusion; Acknowledgments; References ; Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions V. T. Renard, T. Ota, N. Kumada and H. Hirayama1. Introduction; 2. Experiment; 3. Results and discussion; 4. Conclusion; Acknowledgments; References; Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems S. Roy, B. Cheng and A . Asenov; 1. Introduction; 2. Statistical Device Simulation; 3. Impact of Intrinsic Parameter Fluctuations on Circuits; 3.1. Impact of RDF on 6-TSMM Cells; 4. Conclusions; Acknowledgments; References ; HEMT-Based Nanometer Devices Toward Tetrahertz Era E. Sano and T. Otsuji1. Introduction; 2. Present Status of Millimeter-Wave MMICs; 3. Problems in Nanometer-Scale HEMTs; 4. Plasmon Resonant Photomixer; 5. Conclusions; Acknowledgments; References; Plasma Waves in Two-Dimensional Electron Systems and Their Applications V. Ryzhii, I. Khmyrova, M. Ryzhii, A . Satou, T. Otsuji, V. Mitin and M. S. Shur; 1. Introduction; 2. Plasma Waves and Oscillations in 2DEG Channels; 3. Plasma Instabilities ; 4. Detection of THz Radiation and Frequency Multiplication Using Resonant Excitation of Plasma Oscillations
• Sommario/riassunto: <i>Physics and Modeling of Tera- and Nano-Devices</i> is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as
• Titolo autorizzato: Physics and modeling of tera-and nano-devices
• ISBN: 1-281-93792-4; 9786611937928; 981-277-905-1
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910817887803321
• Lo trovi qui: Univ. Federico II
• Serie: Selected topics in electronics and systems ; ; v. 47.